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| FMM5017VF GaAs MMIC FEATURES * * * * * * High Output Power: 29dBm (typ.) High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50 Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications as a driver or output stage in the 14.0 to 14.5 GHz band. This device is well suited for designs that require less than 1 Watt and lower cost. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25C) Item DC Input Voltage DC Input Voltage Input Power Storage Temperature Operating Case Temperature Symbol VDD VGG Pin Tstg Top Rating 12 -7 17 -55 to +125 -40 to +85 Unit V V dBm C C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Frequency Range Output Power at 1dB G.C.P. Linear Gain Gain Flatness Input VSWR Output VSWR Power Monitor DC Input Current DC Input Current CASE STYLE: VF Symbol f P1dB G G VSWRi VSWRo Vmon IDD IGG Pout = 28.0dBm VDD = 10V VGG = -5V VDD = 10V VGG = -5V f = 14.0 to 14.5 GHz Test Conditions Min. 14.0 28.0 18.0 Limit Typ. Max. ~ 29.0 20.0 1.0 2:1 2.3:1 2.5 700 15 14.5 1.5 2.3:1 3:1 1000 20 Unit GHz dBm dB dB V mA mA Edition 1.1 August 1999 1 FMM5017VF GaAs MMIC OUTPUT POWER vs. FREQUENCY VDD=10V VGG=-5V P1dB OUTPUT POWER vs. INPUT POWER VDD=10V 30 VGG=-5V f=14.25GHZ Pin=12dBm 30 Output Power (dBm) 28 26 24 22 10dBm 8dBm Output Power (dBm) 28 26 24 22 6dBm 4dBm 2dBm 2 14.0 14.1 14.2 14.3 14.4 14.5 4 6 8 10 12 Input Power (dBm) Frequency (GHz) Recommended Bias Circuit 1000pF 50 VGG 1000pF 50 3 2 1 50 1000pF 4 5 6 50 1000pF Pmon VDD VDD 2 FMM5017VF GaAs MMIC +j50 +j100 +j25 0.06 S11 S22 +90 SCALE FOR |S12| S21 S12 +j250 +j10 14.7GHz 0.04 0.02 0 10 25 14.7GHz 100 13.8GHz 180 15 10 14.7GHz 5 14.7GHz 13.8GHz 13.8GHz SCALE FOR |S21| 0 -j10 13.8GHz -j250 -j25 -j50 -j100 -90 S-PARAMETERS VDD = 10V, VGG = -5V FREQUENCY (MHZ) 13800 13900 14000 14100 14200 14300 14400 14500 14600 14700 S11 MAG .074 .100 .109 .119 .125 .138 .147 .156 .174 .196 S21 ANG -61.1 -62.8 -69.8 -76.2 -86.0 -93.2 -102.6 -112.8 -124.2 -136.3 S12 ANG MAG .007 .001 .004 .007 .009 .005 .007 .007 .005 .007 S22 ANG -77.6 -66.1 -134.6 -114.5 -133.9 -110.5 -88.3 -100.2 172.4 -158.7 MAG 11.417 11.014 11.331 10.909 11.088 10.730 10.728 10.562 10.353 9.941 MAG .341 .289 .250 .203 .170 .126 .081 .027 .057 .128 ANG -86.2 -87.2 -89.6 -89.4 -93.2 -94.5 -104.1 -137.0 96.0 69.3 -6.7 -27.2 -38.0 -55.3 -69.1 -83.9 -98.6 -113.4 -128.9 -146.6 Download S-Parameters, click here Pin Configuration 1 2 3 6 5 4 3 FMM5017VF GaAs MMIC Case Style "VF" 17.78 (0.70) 13.46 (0.530) 8.38 (0.330) 6.4 (0.253) INDEX 4-C 1.52 (0.060) 1.0 MIN (0.039) 1 2 3 PIN ASSIGNMENT Pin 2.44 (0.096) 6.63 (0.261) 8.33 (0.328) 6.63 (0.260) Symbol VDD RF in VGG Pmon RF out VDD 2-R 1.22 (0.048) 6 5 4 1. 2. 3. 4. 5. 6. 0.125 (0.005) 1.02 (0.040) 3.0 MAX (0.118) 1.0 MIN (0.039) 4-0.5 (0.020) 2-0.3 (0.012) (4-R 0.5) (0.020) Unit: mm(inches) 7.88 (0.310) 0.51 (0.020) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 |
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